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Mhchxm Electronics Technology was founded in 2005 and is a semiconductor company specializing in the research and development, production, and sales of power devices.

Product

Rectifier device Schottky diode High junction temperature Schottky diode Low forward voltage drop Schottky diode Low forward voltage drop and high junction temperature Schottky diode High current Schottky diode High voltage Schottky diode Fast recovery diode Ultrafast recovery diode Low forward voltage drop fast recovery diode 650V Fast recovery diode Rectifier diode
SiC devices SiC diode SiC MOSFET
Bipolar Transistor Audio amplifier transistor High-frequency amplifying transistor Power Darlington Transistor
MOS Medium low voltage MOS High voltage MOS
Power Module Schottky module Fast Recovery Module

Applications

UPS power supply OBC car charger Charging station Portable DC charger PV Inverter Server power Charger Inverter welding machine Stage light power supply Outdoor power supply LED plant lighting

Mhchxm Electronics Technology was founded in 2005 and is a semiconductor company specializing in the research and development, production, and sales of power devices.

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Mhchxm Electronics Technology was founded in 2005 and is a semiconductor company specializing in the research and development, production, and sales of power devices.

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Company News New Product Release

Mhchxm Electronics Technology was founded in 2005 and is a semiconductor company specializing in the research and development, production, and sales of power devices.

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Chinese

Jiangsu MHCHXM has launched SiC MOSFET products.

New Product Announcement Return List

Product Introduction Jiangsu MHCHXM has launched the third-generation semiconductor SiC MOSFET products. The product packaging forms include TO-252/TO-247/TO-220/TO-263M/TO-220F, etc.
The SiC MOSFET products of Jiangsu MHCHXM have higher breakdown voltage, faster switching frequency, stronger high-temperature resistance, and system advantages: lower power loss, higher power density, higher operating frequency, higher operating temperature, lower EMI, and most importantly, smaller system size and cost, thereby improving energy efficiency.
The product portfolio includes voltage levels such as 650V and 1200V, with the rated conduction resistance ranging from 20mΩ to 540mΩ. It has been widely used in various key fields and boasts outstanding reliability.

Product Features Gate drive 15-18V, compatible with existing ICs
Lower on-resistance, reduces body diode recovery time
Reduces chip Qg and capacitance, with extremely low switching loss
Excellent gate oxide layer reliability
Extremely low switching loss and conduction loss
Compatible with silicon-based MOSFETs and IGBTs in the driver
Sufficient short-circuit anti-auger capability

Product selection recommendation

SiC MOSFET產(chǎn)品

Part Number
Package
VDSS(V)
ID(A)
VGS(th)_Min (V)
VGS(th)_Max (V)
Rdson@VGS15V_Typ(mΩ)
Rdson@VGS15V_Max(mΩ)
Rdson@VGS18V_TYP(mΩ)
Rdson@VGS18V_Max(mΩ)

HXMC65N160S3HXMC65N300S3HXMC65N130S1HXMC65N130S1HXMC65N70S1HXMC65N130F1HXMC65N250F1HXMC65N70F1HXMC65N160F3HXMC65N300F3HXMC65N160H3HXMC65N300H3HXMC65N130H1HXMC65N250H1HXMC65N70H1HXMC65N70P1HXMC65N100S3HXMC65N100F3HXMC65N100H3HXMC65N100P3
TO-252-2LTO-252-2LTO-252-2LTO-252-2LTO-252-2LITO-220ABITO-220ABITO-220ABITO-220ABITO-220ABTO-220ABTO-220ABTO-220ABTO-220ABTO-220ABTO-247ABTO-252-2LITO-220ABTO-220ABTO-247AB
650650650650650650650650650650650650650650650650650650650650
1710201160201160171017102011606028282828
2.42.42.72.72.72.72.72.72.42.42.42.42.72.72.72.72.42.42.42.4
444.54.54.54.54.54.544444.54.54.54.54444
19038019038090190380901903801903801903809090130130130130
268530250500120250500120268530268530250500120120200200200200
16030013025065130250651603001603001302506565100100100100
22042019038090190380902204202204201903809090150150150150

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SiC MOSFET產(chǎn)品

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